M95M01-DRDW8TP/V

1-Mbit serial SPI bus EEPROM operating at 105C

Parameters

Supply Voltage Min Volt	1.7
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	105.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	TSSOP-8L

Description

The M95M01-DRE is a 1-Mbit serial electrically erasable programmable memory (EEPROM) devices capable of operating up to 105°C. The product complies with the reliability requirements defined by AEC-Q100 Grade 2 and is accessed through a simple serial SPI-compatible interface running at up to 16...
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Key features

Key features
SPI interface Compatible with the serial peripheral interface (SPI) bus Memory 1-Mbit (128 Kbytes) EEPROM Page size: 256 bytes Additional 256-byte lockable identification page Supply voltage 1.7 V to 5.5 V Temperature Operating temperature range: -40°C up to +105°C Clock frequency Up to 16 MHz Fast write cycle time Byte and page write within 3.5 ms (typically 2.6 ms) Advanced features Schmitt trigger inputs for noise filtering Software write protection by quarter block Hardware write protection of the whole memory array Enhanced ESD/latch-up protection ESD human body model 4000 V 5 μs fast wake-up time Write cycle performance More than 4 million write cycles at +25°C More than 1.2 million write cycles at +85°C More than 900 K write cycles at +105°C Data retention performance More than 200 year data retention Ultra-low power current consumption 0.6 μA (typical) in standby mode 650 μA (typical) for read current 1 mA (typical) for write current Packages SO8N, TSSOP8 (ECOPACK2-compliant)

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Parameters

Supply Voltage Min Volt	1.7
Supply Voltage Max Volt	5.5
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	105.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	TSSOP-8L

Description

Key features

Key features
SPI interface Compatible with the serial peripheral interface (SPI) bus Memory 1-Mbit (128 Kbytes) EEPROM Page size: 256 bytes Additional 256-byte lockable identification page Supply voltage 1.7 V to 5.5 V Temperature Operating temperature range: -40°C up to +105°C Clock frequency Up to 16 MHz Fast write cycle time Byte and page write within 3.5 ms (typically 2.6 ms) Advanced features Schmitt trigger inputs for noise filtering Software write protection by quarter block Hardware write protection of the whole memory array Enhanced ESD/latch-up protection ESD human body model 4000 V 5 μs fast wake-up time Write cycle performance More than 4 million write cycles at +25°C More than 1.2 million write cycles at +85°C More than 900 K write cycles at +105°C Data retention performance More than 200 year data retention Ultra-low power current consumption 0.6 μA (typical) in standby mode 650 μA (typical) for read current 1 mA (typical) for write current Packages SO8N, TSSOP8 (ECOPACK2-compliant)