M95M04-DRMN6TP

4-Mbit serial SPI bus EEPROM

Parameters

Supply Voltage Min Volt	1.8
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	85.0
ECCN US	3A991.b.1.b.1
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO8

Description

The M95M04-DR device is electrically erasable programmable memory (EEPROM) organized as 524288 x 8 bits, accessed through the SPI bus.The M95M04-DR can operate with a supply range from 1.8 to 5.5 V, and is guaranteed over the -40 °C/+85 °C temperature range.The M95M04-DR offer an...
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Key features

Key features
SPI interface Compatible with the serial peripheral interface (SPI) bus Memory 4-Mbit (512-Kbyte) of EEPROM Page size: 512-byte Additional 512-byte lockable identification page Supply voltage 1.8 V to 5.5 V Temperature Operating temperature range: -40 °C up to +85 °C Clock frequency Up to 5 MHz for V_CC ≥ 1.8 V Up to 10 MHz for V_CC ≥ 2.5 V Fast write cycle time Byte and page write within 5 ms (typically 3.8 ms) Performance More than 4 million write cycles More than 200-year data retention ESD human body model 4000 V Ultra-low power current consumption 600 nA (typical) in standby mode 650 μA (typical) for read current 600 μA (typical) for write current Advanced feature Schmitt trigger inputs for noise filtering Software write protection by quarter block Hardware write protection Enhanced ESD/latch-up protection Packages (ECOPACK2-compliant) SO8N TSSOP8 WLCSP8

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Parameters

Supply Voltage Min Volt	1.8
Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	85.0
ECCN US	3A991.b.1.b.1
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	SO8

Description

Key features

Key features
SPI interface Compatible with the serial peripheral interface (SPI) bus Memory 4-Mbit (512-Kbyte) of EEPROM Page size: 512-byte Additional 512-byte lockable identification page Supply voltage 1.8 V to 5.5 V Temperature Operating temperature range: -40 °C up to +85 °C Clock frequency Up to 5 MHz for V_CC ≥ 1.8 V Up to 10 MHz for V_CC ≥ 2.5 V Fast write cycle time Byte and page write within 5 ms (typically 3.8 ms) Performance More than 4 million write cycles More than 200-year data retention ESD human body model 4000 V Ultra-low power current consumption 600 nA (typical) in standby mode 650 μA (typical) for read current 600 μA (typical) for write current Advanced feature Schmitt trigger inputs for noise filtering Software write protection by quarter block Hardware write protection Enhanced ESD/latch-up protection Packages (ECOPACK2-compliant) SO8N TSSOP8 WLCSP8