MASTERGAN2

MASTERGAN2

MASTERGAN2TR

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High power density 600V Half bridge driver with two enhancement mode GaN HEMTs

Quantity $ per Unit Savings
1 - 9$13.790%
10 - 24$12.688%
25 - 99$12.1612%
100 - 249$10.7122%
250 - 499$10.1926%
500$9.9328%
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In stock
$13.79
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors in asymmetrical configuration:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS)
    • IDS(MAX) = 10 A (LS) + 6.5 A (HS)
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.