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High power density 600V Half bridge driver with two enhancement mode GaN HEMTs

Quantity $ per Unit Savings
1 - 9$15.170%
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In stock
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
Packing TypeTape And Reel
RoHs compliantEcopack2
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM

The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in asymmetrical half‑bridge configuration.

The integrated GaN power transistors have 650 V drain‑source breakdown voltage and RDS(ON) of 150 mΩ and 225 mΩ for low-side and high-side respectively, while the high-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode

The MASTERGAN2 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.

The input pins' extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.

The MASTERGAN2 operates in the industrial temperature range, -40°C to 125°C.

The device is available in a compact 9x9 mm QFN package.

Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors in asymmetrical configuration:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS)
    • IDS(MAX) = 10 A (LS) + 6.5 A (HS)
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.