MASTERGAN4L

MASTERGAN4L

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MASTERGAN4LTR

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM

The MASTERGAN4L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have respectively RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate...
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Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
    • QFN 9 x 9
      x 1 mm package
    • RDS(ON)
      = 225 mΩ
    • IDS(MAX)
      = 6.5 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on VCC
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.
  • Ultra short wake up time, less than 200 ns
In stock
Quantity $ per unit Savings
1-9$7.390%
10-24$6.6710%
25-99$6.3614%
100-249$5.5325%
250-499$5.2729%
500$4.8135%
Contact sales
$7.39
$7.39
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM

The MASTERGAN4L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.The integrated power GaNs have respectively RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate...
Read More

Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
    • QFN 9 x 9
      x 1 mm package
    • RDS(ON)
      = 225 mΩ
    • IDS(MAX)
      = 6.5 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on VCC
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.
  • Ultra short wake up time, less than 200 ns