MASTERGAN5

High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	VFQFPN 9X9X1.0 31L PITCH 0.6MM

Description

The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 450 mΩ, while the high side of the embedded gate...
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Key features

Key features
600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: QFN 9 x 9 x 1 mm package R_DS(ON) = 450 mΩ I_DS(MAX) = 4 A Reverse current capability Zero reverse recovery loss UVLO protection on low-side and high-side Internal bootstrap diode Interlocking function Dedicated pin for shut down functionality Accurate internal timing match 3.3 V to 15 V compatible inputs with hysteresis and pull-down Over temperature protection Bill of material reduction Very compact and simplified layout Flexible, easy and fast design.

Out of Stock

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	VFQFPN 9X9X1.0 31L PITCH 0.6MM

Description

Key features

Key features
600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: QFN 9 x 9 x 1 mm package R_DS(ON) = 450 mΩ I_DS(MAX) = 4 A Reverse current capability Zero reverse recovery loss UVLO protection on low-side and high-side Internal bootstrap diode Interlocking function Dedicated pin for shut down functionality Accurate internal timing match 3.3 V to 15 V compatible inputs with hysteresis and pull-down Over temperature protection Bill of material reduction Very compact and simplified layout Flexible, easy and fast design.