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    MASTERGAN5TR

    MASTERGAN5TR

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    MASTERGAN5

    High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTray
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
    Description

    The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 450 mΩ, while the high side of the embedded gate...
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    Key features
    Key features
    • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
      • QFN 9 x 9 x 1 mm package
      • RDS(ON) = 450 mΩ
      • IDS(MAX) = 4 A
    • Reverse current capability
    • Zero reverse recovery loss
    • UVLO protection on low-side and high-side
    • Internal bootstrap diode
    • Interlocking function
    • Dedicated pin for shut down functionality
    • Accurate internal timing match
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Over temperature protection
    • Bill of material reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design.
    In stock
    Quantity $ per unit Savings
    1-9$7.0914%
    10-24$5.4712%
    25-99$4.6824%
    100-249$4.6725%
    250-499$4.4029%
    500$4.1533%
    500 + Contact sales
    $7.09
    $6.19
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTray
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
    Description

    The MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 450 mΩ, while the high side of the embedded gate...
    Read More

    Key features
    Key features
    • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
      • QFN 9 x 9 x 1 mm package
      • RDS(ON) = 450 mΩ
      • IDS(MAX) = 4 A
    • Reverse current capability
    • Zero reverse recovery loss
    • UVLO protection on low-side and high-side
    • Internal bootstrap diode
    • Interlocking function
    • Dedicated pin for shut down functionality
    • Accurate internal timing match
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Over temperature protection
    • Bill of material reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design.
    Associated products