MASTERGAN5TR

MASTERGAN5TR

MASTERGAN5

Active

High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs

Quantity $ per Unit Savings
1 - 500$11.780%
Contact Sales
In stock
$11.78
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 450 mΩ
    • IDS(MAX) = 4 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.