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    MASTERGAN6TR

    650 V enhancement mode GaN High power density half-bridge with high voltage driver

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTFQFPN 9X9X1.05 35L PITCH 0.6MM
    Description

    The MASTERGAN6 is an advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a high-voltage, high frequency gate driver.The integrated power GaNs have typical RDS(ON) of 140 mΩ and 650 V drain source blocking voltage.The...
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    Key features
    Key features
    • Power system-in-package integrating 650 V GaN transistors half-bridge with high-voltage gate driver
    • 140 mΩ typ low-side and high-side RDS(ON) with IDS(MAX) = 10 A
    • Linear regulators to regulate high-side and low-side driver supply voltage
    • Overall driver’s propagation delay of 45 ns and 35 ns minimum pulse
    • Very fast wake-up time of high-side driver
    • Externally adjustable turn-on resistors
    • UVLO protection on VCC and high-side driver supply voltage
    • Interlocking function
    • Dedicated pins for standby and shutdown with fault pin for remote signal
    • 3.3 V to 15 V (typ.) compatible inputs with hysteresis and pull-down
    • Thermal shutdown protection
    In stock
    Quantity $ per unit Savings
    1-9$8.420%
    10-24$6.5322%
    25-99$6.0628%
    100-249$5.5334%
    250-499$5.2837%
    500$4.9841%
    500 + Contact sales
    $8.42
    $8.42
    or
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTFQFPN 9X9X1.05 35L PITCH 0.6MM
    Description

    The MASTERGAN6 is an advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a high-voltage, high frequency gate driver.The integrated power GaNs have typical RDS(ON) of 140 mΩ and 650 V drain source blocking voltage.The...
    Read More

    Key features
    Key features
    • Power system-in-package integrating 650 V GaN transistors half-bridge with high-voltage gate driver
    • 140 mΩ typ low-side and high-side RDS(ON) with IDS(MAX) = 10 A
    • Linear regulators to regulate high-side and low-side driver supply voltage
    • Overall driver’s propagation delay of 45 ns and 35 ns minimum pulse
    • Very fast wake-up time of high-side driver
    • Externally adjustable turn-on resistors
    • UVLO protection on VCC and high-side driver supply voltage
    • Interlocking function
    • Dedicated pins for standby and shutdown with fault pin for remote signal
    • 3.3 V to 15 V (typ.) compatible inputs with hysteresis and pull-down
    • Thermal shutdown protection
    Associated products