Toggle Nav
Search
Compare ()
Cart 0
Menu
Account
Settings
  • Language
    English
    • Currency
    USD

    Holiday Shipping — Any orders received after business close on Friday, September 4 will ship on Tuesday, September 8. We apologize for any inconvenience.

    main product photo

    Active

    Free

    MASTERGAN7TR

    650 V enhancement mode GaN High power density half-bridge with high voltage driver

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTFQFPN 9X9X1.05 35L PITCH 0.6MM
    Description

    The MASTERGAN7 is an advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a high-voltage, high frequency gate driver.The integrated power GaNs have typical RDS(ON) of 270 mΩ and 650 V drain source blocking voltage.The...
    Read More

    Key features
    Key features
    • Power system-in-package integrating 650 V GaN transistors half-bridge with high-voltage gatedriver
    • 270 mΩ typ low-side and high-side RDS(ON) with IDS(MAX) = 6 A
    • Linear regulators to regulate high-side and low-side driver supply voltage
    • Overall driver’s propagation delay of 45 ns and 35 ns minimum pulse
    • Very fast wake-up time of high-side driver
    • Externally adjustable turn-on resistors
    • UVLO protection on VCC and high-side driver supply voltage
    • Interlocking function
    • Dedicated pins for standby and shutdown with fault pin for remote signal
    • 3.3 V to 15 V (typ.) compatible inputs with hysteresis and pull-down
    • Thermal shutdown protection
    In stock
    Quantity $ per unit Savings
    1-9$7.002%
    10-24$5.3722%
    25-50$4.9728%
    50 + Contact sales
    $7.00
    $6.86
    or
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTFQFPN 9X9X1.05 35L PITCH 0.6MM
    Description

    The MASTERGAN7 is an advanced power system-in-package integrating two enhancement mode GaN transistors in a half-bridge configuration driven by a high-voltage, high frequency gate driver.The integrated power GaNs have typical RDS(ON) of 270 mΩ and 650 V drain source blocking voltage.The...
    Read More

    Key features
    Key features
    • Power system-in-package integrating 650 V GaN transistors half-bridge with high-voltage gatedriver
    • 270 mΩ typ low-side and high-side RDS(ON) with IDS(MAX) = 6 A
    • Linear regulators to regulate high-side and low-side driver supply voltage
    • Overall driver’s propagation delay of 45 ns and 35 ns minimum pulse
    • Very fast wake-up time of high-side driver
    • Externally adjustable turn-on resistors
    • UVLO protection on VCC and high-side driver supply voltage
    • Interlocking function
    • Dedicated pins for standby and shutdown with fault pin for remote signal
    • 3.3 V to 15 V (typ.) compatible inputs with hysteresis and pull-down
    • Thermal shutdown protection
    Associated products