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    MJD112T4

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    Low voltage NPN power Darlington transistor
    Learn More about MJD112T4

    Quantity $ per Unit Savings
    1 - 9$0.890%
    10 - 99$0.7912%
    100 - 140$0.6032%
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    Parameter NameParameter Value
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameDPAK

    The devices are manufactured in planar technology with \base island\ layout and monolithic Darlington configuration.

    Key features
    • Good hFE linearity
    • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
    • High fT frequency