PD20010-E

PD20010-E

PD20010TR-E

Active

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Quantity $ per Unit Savings
1 - 500$17.010%
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Out of stock
$17.01
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)
Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V
  • Plastic package
  • ESD protection
  • In compliance with the 2002/95/EC European directive