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PD55003L-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 5x5 HV

The PD55003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L-E boasts the excellent gain,...
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Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT=3 W mith 17dB gain@500 MHz/12.5 V
  • New leadless plastic package
  • ESD protection
  • Supplied in tape and reel of 3 K units
  • In compliance with 2002/95/EC european directive
In stock
Quantity $ per unit Savings
1-9$7.770%
10-24$6.9211%
25-99$6.5116%
100-249$5.7426%
250-300$5.4630%
Contact sales
$7.77
$7.77
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 5x5 HV

The PD55003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L-E boasts the excellent gain,...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT=3 W mith 17dB gain@500 MHz/12.5 V
  • New leadless plastic package
  • ESD protection
  • Supplied in tape and reel of 3 K units
  • In compliance with 2002/95/EC european directive