PD55025S-E

PD55025S-E

PD55025-E

PD55025-E

Active

PD55025TR-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V
  • New RF plastic package
Out of Stock
Quantity $ per unit Savings
1-500$29.350%
Contact sales
$29.35
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 25 W with 14.5dB gain @ 500 MHz / 12.5 V
  • New RF plastic package