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PD55035STR1-E

35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (straight lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
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Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V
  • New RF plastic package
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ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (straight lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 35 W with 16.9 dB at 500 MHz, 12.5 V
  • New RF plastic package