Special offer on selected Evaluation Tools. Use code AUG-EVALTOOLS-01-10OFF and explore the full selection. Buy now!
Active
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (straight lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
Read More
|
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $32.57 | 2% |
| 10-99 | $23.90 | 25% |
| 100-399 | $22.34 | 30% |
| 400-500 | $21.95 | 31% |
| 500 + |
Contact sales |
|
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (straight lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
Read More
|