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PD57018-E

PD57018-E

PD57018STR-E

PD57018STR-E

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PD57018TR-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
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Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 18 W with 16.5dB gain@945 MHz/28 V
  • New RF plastic package
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Quantity $ per unit Savings
1-500$30.050%
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$30.05
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 18 W with 16.5dB gain@945 MHz/28 V
  • New RF plastic package