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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity...
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|
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity...
Read More
|