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PD57045-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
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Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 45 W with 13dB gain @ 945 MHz / 28 V
  • New RF plastic package
Out of Stock
Quantity $ per unit Savings
1-399$49.400%
400-500$41.7615%
Contact sales
$49.40
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain,...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 45 W with 13dB gain @ 945 MHz / 28 V
  • New RF plastic package