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PD57060TR-E

PD57060TR-E

Active

PD57060-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
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Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 60 W with 14.3dB gain@ 945 MHz/28 V
  • New RF plastic package
In stock
Quantity $ per unit Savings
1-9$61.460%
10-99$46.5324%
100-399$45.2126%
400-500$45.2026%
Contact sales
$61.46
$61.46
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 60 W with 14.3dB gain@ 945 MHz/28 V
  • New RF plastic package