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PD57060-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $56.24 | 0% |
| 10-99 | $46.08 | 18% |
| 100-399 | $45.20 | 20% |
| 400-500 | $44.61 | 21% |
| 500 + | Contact sales | |
$56.24
$56.24
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
Read More
|