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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $53.02 | 0% |
10-24 | $51.82 | 2% |
25-49 | $51.31 | 3% |
50-99 | $49.45 | 7% |
100-249 | $46.13 | 13% |
250-399 | $46.12 | 13% |
400-500 | $46.11 | 13% |
500 + |
Contact sales |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
Read More
|