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PD57060-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $51.54 | 0% |
| 10-24 | $48.92 | 5% |
| 25-49 | $47.77 | 7% |
| 50-99 | $47.18 | 8% |
| 100-249 | $44.23 | 14% |
| 250-399 | $43.34 | 16% |
| 400-500 | $42.48 | 18% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (formed lead) |
The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
Read More
|