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PD57060S-E

PD57060S-E

PD57060-E

PD57060-E

Active

PD57060TR-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
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Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 60 W with 14.3dB gain@ 945 MHz/28 V
  • New RF plastic package
Out of Stock
Quantity $ per unit Savings
1-500$53.360%
Contact sales
$53.36
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 60 W with 14.3dB gain@ 945 MHz/28 V
  • New RF plastic package