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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Operating Range | Commercial |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | PowerSO-10RF (formed lead) |
The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain,...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $30.50 | 0% |
10-99 | $27.11 | 11% |
100-249 | $23.71 | 22% |
250-399 | $22.13 | 27% |
400-500 | $20.23 | 34% |
500 + |
Contact sales |
Operating Range | Commercial |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | PowerSO-10RF (formed lead) |
The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain,...
Read More
|