PD85035S-E

PD85035S-E

Active

PD85035-E

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Operating RangeCommercial
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain,...
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Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V
  • Plastic package
  • ESD protection
  • In compliance with the 2002/95/EC1 European directive
Out of Stock
Quantity $ per unit Savings
1-399$30.520%
400-500$22.6526%
Contact sales
$30.52
Operating RangeCommercial
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerSO-10RF (formed lead)

The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain,...
Read More

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V
  • Plastic package
  • ESD protection
  • In compliance with the 2002/95/EC1 European directive