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PD85035-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
| Operating Range | Commercial |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (formed lead) |
The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain,...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $32.39 | 0% |
| 10-99 | $27.12 | 16% |
| 100-399 | $23.73 | 27% |
| 400-500 | $23.70 | 27% |
| 500 + | Contact sales | |
| Operating Range | Commercial |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerSO-10RF (formed lead) |
The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain,...
Read More
|
