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    PD85035-E

    PD85035-E

    PD85035STR-E

    PD85035STR-E

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    PD85035S-E

    RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

    Parameters
    Operating RangeCommercial
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerSO-10RF (straight lead)
    Description

    The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain,...
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    Key features
    Key features
    • Excellent thermal stability
    • Common source configuration
    • POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC1 European directive
    Out of Stock
    Quantity $ per unit Savings
    1-399$31.790%
    400-500$21.4433%
    500 + Contact sales
    $31.79
    Parameters
    Operating RangeCommercial
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerSO-10RF (straight lead)
    Description

    The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain,...
    Read More

    Key features
    Key features
    • Excellent thermal stability
    • Common source configuration
    • POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC1 European directive
    Associated products