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ACEPACK 2 power module, fourpack topology, 650 V, 23 mOhm typ. SiC Power MOSFET gen.3 with NTC
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ACEPACK 1 converter inverter brake 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and
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ACEPACK 1 converter inverter brake 1200 V, 15 A trench gate field-stop IGBT M series, soft diode and
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ACEPACK 2 power module, 3-level topology, based on silicon carbide Power MOSFETs 750 and 1200 V, 100
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ACEPACK 2 power module, triple boost (650 V, 49 mOhm typ.) plus half-bridge topology (650 V, 23.5 mO
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ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC
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ACEPACK 2 power module, 3-level topology, 1200 V, 13 mOhm typ. SiC Power MOSFET gen.2 with NTC
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ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode an
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ACEPACK 2 power module, fourpack topology, 1200 V, 13 mOhm typ. SiC Power MOSFET gen.2 with NTC