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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode
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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package
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N-channel 30 V, 0.0037 Ohm typ., 80 A, in DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
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N-channel 1000 V, 2.7 Ohm typ., 3.5 A SuperMESH Power MOSFET in a TO-220 package
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N-channel 600 V, 0.48 Ohm typ., 13 A SuperMesh Power MOSFET in TO-220FP package