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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in D7 packing
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N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
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Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-220 package
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N-channel 500 V, 300 mOhm typ., 12 A MDmesh Power MOSFET in a D2PAK package
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N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh M5 Power MOSFET in D2PAK Package
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N-channel 650 V, 53 mOhm typ., 55 A MDmesh DM6 Power MOSFET in a TO-LL package
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N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-220FP package