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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 pa
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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads pac
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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package