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High-density power driver - High voltage full bridge with integrated comparators
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | QFN.150.70.10-46L |
The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $3.90 | 27% |
10-24 | $2.79 | 48% |
25-99 | $2.67 | 50% |
100-500 | $2.50 | 53% |
500 + |
Contact sales |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | QFN.150.70.10-46L |
The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be...
Read More
|