PWD5F60

High-density power driver - High voltage full bridge with integrated comparators

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	QFN.150.70.10-46L

Description

The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be...
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Key features

Key features
Power system-in-package integrating gate drivers and high-voltage power MOSFETs R_DS(ON) = 1.38 Ω BV_DSS = 600 V Suitable for operating as full bridge dual independent half bridges UVLO protection on low-side and high-side 3.3 V to 15 V compatible inputs with hysteresis and pull-down Internal bootstrap diode Uncommitted comparators Adjustable dead-time Bill of material reduction Very compact and simplified layout Flexible, easy and fast design

Out of Stock

Quantity	$ per unit	Savings
1-9	$4.15	22%
10-24	$3.17	41%
25-99	$2.92	45%
100-249	$2.65	50%
250-499	$2.52	53%
500	$2.50	53%
500 +	Contact sales

Special Price $4.15 Regular Price $5.34

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	125.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	QFN.150.70.10-46L

Description

Key features

Key features
Power system-in-package integrating gate drivers and high-voltage power MOSFETs R_DS(ON) = 1.38 Ω BV_DSS = 600 V Suitable for operating as full bridge dual independent half bridges UVLO protection on low-side and high-side 3.3 V to 15 V compatible inputs with hysteresis and pull-down Internal bootstrap diode Uncommitted comparators Adjustable dead-time Bill of material reduction Very compact and simplified layout Flexible, easy and fast design