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PWD5F60

PWD5F60

Active

PWD5F60TR

High-density power driver - High voltage full bridge with integrated comparators

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameQFN.150.70.10-46L

The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be...
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Key features
  • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
    • RDS(ON) = 1.38 Ω
    • BVDSS = 600 V
  • Suitable for operating as
    • full bridge
    • dual independent half bridges
  • UVLO protection on low-side and high-side
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Internal bootstrap diode
  • Uncommitted comparators
  • Adjustable dead-time
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design
In stock
Quantity $ per unit Savings
1-9$4.700%
10-24$4.328%
25-99$4.1312%
100-249$3.7321%
250-499$3.5824%
500$3.2431%
Contact sales
$4.70
$4.70
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameQFN.150.70.10-46L

The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be...
Read More

Key features
  • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
    • RDS(ON) = 1.38 Ω
    • BVDSS = 600 V
  • Suitable for operating as
    • full bridge
    • dual independent half bridges
  • UVLO protection on low-side and high-side
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Internal bootstrap diode
  • Uncommitted comparators
  • Adjustable dead-time
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design