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    PWD5F60

    PWD5F60

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    PWD5F60TR

    High-density power driver - High voltage full bridge with integrated comparators

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameQFN.150.70.10-46L
    Description

    The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be...
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    Key features
    Key features
    • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
      • RDS(ON) = 1.38 Ω
      • BVDSS = 600 V
    • Suitable for operating as
      • full bridge
      • dual independent half bridges
    • UVLO protection on low-side and high-side
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Internal bootstrap diode
    • Uncommitted comparators
    • Adjustable dead-time
    • Bill of material reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design
    In stock
    Quantity $ per unit Savings
    1-9$3.912%
    10-99$3.5312%
    100-249$3.2419%
    250-499$3.1421%
    500$2.9526%
    500 + Contact sales
    $3.91
    Special Price $3.91 Regular Price $3.99
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameQFN.150.70.10-46L
    Description

    The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be...
    Read More

    Key features
    Key features
    • Power system-in-package integrating gate drivers and high-voltage power MOSFETs
      • RDS(ON) = 1.38 Ω
      • BVDSS = 600 V
    • Suitable for operating as
      • full bridge
      • dual independent half bridges
    • UVLO protection on low-side and high-side
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Internal bootstrap diode
    • Uncommitted comparators
    • Adjustable dead-time
    • Bill of material reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design
    Associated products