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PWD5F60TR
High-density power driver - High voltage full bridge with integrated comparators
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 125.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | QFN.150.70.10-46L |
The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $3.85 | 3% |
| 10-24 | $3.14 | 21% |
| 25-99 | $2.95 | 26% |
| 100-249 | $2.74 | 31% |
| 250-499 | $2.64 | 34% |
| 500 | $2.57 | 36% |
| 500 + | Contact sales | |
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 125.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | QFN.150.70.10-46L |
The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.The integrated power MOSFETs have RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be...
Read More
|
