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180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | N/A |
Grade | Industrial |
Package Name | B4E |
The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper...
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ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | N/A |
Grade | Industrial |
Package Name | B4E |
The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper...
Read More
|