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    RF2L16180CB4

    180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantN/A
    GradeIndustrial
    Package NameB4E
    Description

    The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper...
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    Key features
    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Optimized for Doherty applications
    • Large positive and negative gate-source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC
    In stock
    Quantity $ per unit Savings
    1$142.300%
    1 + Contact sales
    $142.30
    $142.30
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantN/A
    GradeIndustrial
    Package NameB4E
    Description

    The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper...
    Read More

    Key features
    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Optimized for Doherty applications
    • Large positive and negative gate-source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC