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RF2L16180CB4

180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameB4E

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper...
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Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched for ease of use
  • Optimized for Doherty applications
  • Large positive and negative gate-source voltage range for improved class C operation
  • In compliance with the European Directive 2002/95/EC
In stock
Quantity $ per unit Savings
1$141.800%
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$141.80
$141.80
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantN/A
GradeIndustrial
Package NameB4E

The RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper...
Read More

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched for ease of use
  • Optimized for Doherty applications
  • Large positive and negative gate-source voltage range for improved class C operation
  • In compliance with the European Directive 2002/95/EC