📢 eStore will be at Sensors Converge, June 24-26 in Santa Clara, CA - use discount code 10036. Register now

Active

RF2L24280CB4

280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantN/A
GradeIndustrial
Package NameD4E

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched pair transistors in push-pull configuration
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the European directive 2002/95/EC
Out of Stock
Quantity $ per unit Savings
1-9$204.080%
10-19$191.146%
20-49$183.9510%
50-99$183.1710%
100-500$179.0412%
Contact sales
$204.08
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantN/A
GradeIndustrial
Package NameD4E

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched pair transistors in push-pull configuration
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the European directive 2002/95/EC