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    RF3L05200CB4

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    200 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
    Learn More about RF3L05200CB4

    Quantity $ per Unit Savings
    1 - 500$170.760%
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    $170.76
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantN/A
    GradeIndustrial
    Package NameLBB

    The RF3L05200CB4 is a 200 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate-source voltage range for improved class C operation
    • In compliance with the European directive 2002/95/EC