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RF3L05200CB4
200 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | LBB |
The RF3L05200CB4 is a 200 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.
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Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $153.10 | 0% |
| 10-19 | $143.39 | 6% |
| 20-49 | $138.00 | 10% |
| 50-99 | $137.89 | 10% |
| 100-500 | $134.74 | 12% |
| 500 + | Contact sales | |
$153.10
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | LBB |
The RF3L05200CB4 is a 200 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.
|