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RF3L05200CB4

Active

200 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

Quantity $ per Unit Savings
1 - 500$170.760%
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Out of stock
$170.76
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeN/A
GradeIndustrial
Package NameLBB

The RF3L05200CB4 is a 200 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Large positive and negative gate-source voltage range for improved class C operation
  • In compliance with the European directive 2002/95/EC