Active
650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | N/A |
Grade | Industrial |
Package Name | D4E |
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.
|
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | N/A |
Grade | Industrial |
Package Name | D4E |
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.
|