RF5L08600CB4

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650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Quantity $ per Unit Savings
1 - 500$227.670%
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$227.67
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantN/A
GradeIndustrial
Package NameD4E

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched pair transistors in push-pull configuration
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC