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    RF5L08600CB4

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    650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
    Learn More about RF5L08600CB4

    Quantity $ per Unit Savings
    1 - 500$227.670%
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    $227.67
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTray
    RoHs compliantN/A
    GradeIndustrial
    Package NameD4E

    The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

    Key features
    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched pair transistors in push-pull configuration
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the european directive 2002/95/EC