RF5L08600CB4

Active

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
Learn More about RF5L08600CB4

Quantity	$ per Unit	Savings
1 - 500	$227.67	0%
500 +	Contact Sales

Coming soon

$227.67

Notify me

Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	N/A
Grade	Industrial
Package Name	D4E

Description

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Key features

Key features
High efficiency and linear gain operations Integrated ESD protection Internally matched pair transistors in push-pull configuration Large positive and negative gate-source voltage range for improved class C operation Excellent thermal stability, low HCI drift In compliance with the european directive 2002/95/EC

RF5L08600CB4

Active

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor Learn More about RF5L08600CB4

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
Learn More about RF5L08600CB4