Active
650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tray |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | D4E |
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.
|
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tray |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | D4E |
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.
|