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RF5L08600CB4

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantN/A
GradeIndustrial
Package NameD4E

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched pair transistors in push-pull configuration
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC
Out of Stock
Quantity $ per unit Savings
1-9$204.080%
10-19$191.146%
20-49$183.9510%
50-99$183.1710%
100-500$179.0412%
Contact sales
$204.08
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantN/A
GradeIndustrial
Package NameD4E

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Key features
  • High efficiency and linear gain operations
  • Integrated ESD protection
  • Internally matched pair transistors in push-pull configuration
  • Large positive and negative gate-source voltage range for improved class C operation
  • Excellent thermal stability, low HCI drift
  • In compliance with the european directive 2002/95/EC