RHFAHC00K01V

Rad-Hard, quad high speed NAND gate

Parameters

Supply Voltage Min Volt	1.65
Supply Voltage Max Volt	3.6
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Not compliant
Grade	Industrial
Package Name	Flat-14

Description

The RHFAHC00 device is a very high-speed pure CMOS quad 2-input NAND gate, designed for radiation hardness and characterized in total ionization dose (TID) and single event effect (SEE).It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MIL-PRF-38535 to comply with the...
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Key features

Key features
1.8 V to 3.3 V nominal supply 3.6 V max. operating 4.8 V AMR Very high-speed: propagation delay of 3 ns maximum guaranteed Pure CMOS process CMOS output Ultra-low power 300 krad TID targeted No SEL at 125 MeV.cm²/mg No SEL at 62.5 MeV.cm²/mg SMD : 5962F18202 Mass : 0.55 g

Out of Stock

Parameters

Supply Voltage Min Volt	1.65
Supply Voltage Max Volt	3.6
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Not compliant
Grade	Industrial
Package Name	Flat-14

Description

Key features

Key features
1.8 V to 3.3 V nominal supply 3.6 V max. operating 4.8 V AMR Very high-speed: propagation delay of 3 ns maximum guaranteed Pure CMOS process CMOS output Ultra-low power 300 krad TID targeted No SEL at 125 MeV.cm²/mg No SEL at 62.5 MeV.cm²/mg SMD : 5962F18202 Mass : 0.55 g