RH-AHC00K1

RH-AHC00K1

RHFAHC00K01V Active

Rad-Hard, quad high speed NAND gate
Supply Voltage Min Volt1.65
Supply Voltage Max Volt3.6
ECCN USEAR99
ECCN EUNEC
Packing TypeCarrier Tape
ROHS Compliance GradeNot compliant
GradeIndustrial
Package NameFLAT14 QML narrow FP
Key Features
  • 1.8 V to 3.3 V nominal supply
  • 3.6 V max. operating
  • 4.8 V AMR
  • Very high speed: propagation delay of 3 ns maximum guaranteed
  • Pure CMOS process
  • CMOS output
  • Ultra low power
  • 300 krad TID targeted
  • 125 MeV.cm2/mg SEL free
  • 62.5 MeV.cm2/mg SET free

The RHFAHC00 device is a very high speed pure CMOS quad 2-input NAND gate, designed for radiation hardness and characterized in total ionization dose (TID) and single event effect (SEE).


It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MIL-PRF-38535 to comply with the needs of space applications. It can work from -55 °C to +125 °C ambient temperature.

Out of stock
$0.00
Range Unit Price Savings
1 - 500$0.000%
Contact Sales