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RH-AHC00K1

RH-AHC00K1

Active

RHFAHC00K01V

Rad-Hard, quad high speed NAND gate

Supply Voltage Min Volt1.65
Supply Voltage Max Volt3.6
ECCN USEAR99
ECCN EUNEC
Packing TypeCarrier Tape
RoHs compliantNot compliant
GradeIndustrial
Package NameFlat-14

The RHFAHC00 device is a very high speed pure CMOS quad 2-input NAND gate, designed for radiation hardness and characterized in total ionization dose (TID) and single event effect (SEE).It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MIL-PRF-38535 to comply with the...
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Key features
  • 1.8 V to 3.3 V nominal supply
  • 3.6 V max. operating
  • 4.8 V AMR
  • Very high speed: propagation delay of 3 ns maximum guaranteed
  • Pure CMOS process
  • CMOS output
  • Ultra low power
  • 300 krad TID targeted
  • 125 MeV.cm2/mg SEL free
  • 62.5 MeV.cm2/mg SET free
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Supply Voltage Min Volt1.65
Supply Voltage Max Volt3.6
ECCN USEAR99
ECCN EUNEC
Packing TypeCarrier Tape
RoHs compliantNot compliant
GradeIndustrial
Package NameFlat-14

The RHFAHC00 device is a very high speed pure CMOS quad 2-input NAND gate, designed for radiation hardness and characterized in total ionization dose (TID) and single event effect (SEE).It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MIL-PRF-38535 to comply with the...
Read More

Key features
  • 1.8 V to 3.3 V nominal supply
  • 3.6 V max. operating
  • 4.8 V AMR
  • Very high speed: propagation delay of 3 ns maximum guaranteed
  • Pure CMOS process
  • CMOS output
  • Ultra low power
  • 300 krad TID targeted
  • 125 MeV.cm2/mg SEL free
  • 62.5 MeV.cm2/mg SET free