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    SCT012W90G3-4AG

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameHiP247-4
    Description

    This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
    Read More

    Key features
    Key features
    • AEC-Q101 qualified
    • Very low RDS(on) over the entire temperature range
    • High speed switching performances
    • Very fast and robust intrinsic body diode
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Source sensing pin for increased efficiency
    In stock
    Quantity $ per unit Savings
    1-9$20.330%
    10-500$13.2635%
    500 + Contact sales
    $20.33
    $20.33
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameHiP247-4
    Description

    This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
    Read More

    Key features
    Key features
    • AEC-Q101 qualified
    • Very low RDS(on) over the entire temperature range
    • High speed switching performances
    • Very fast and robust intrinsic body diode
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Source sensing pin for increased efficiency