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SCT014TO65G3

Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-LL

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Key features
  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Source sensing pin for increased efficiency
Out of Stock
Quantity $ per unit Savings
1-500$16.100%
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$16.10
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-LL

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More

Key features
  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Source sensing pin for increased efficiency