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SCT016H120G3AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Automotive |
| Package Name | H2PAK-7 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $22.85 | 0% |
| 10-99 | $16.53 | 28% |
| 100-499 | $16.50 | 28% |
| 500 | $16.49 | 28% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Automotive |
| Package Name | H2PAK-7 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More
|