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SCT027TO65G3

Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-LL

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Key features
  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Source sensing pin for increased efficiency
Out of Stock
Quantity $ per unit Savings
1-9$12.250%
10-99$9.1525%
100-499$7.9135%
500$7.4939%
Contact sales
$12.25
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-LL

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More

Key features
  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Source sensing pin for increased efficiency