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SCT040H120G3AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameH2PAK-7

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Key features
  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Source sensing pin for increased efficiency
In stock
Quantity $ per unit Savings
1-9$16.420%
10-24$13.1920%
25-99$13.1820%
100-249$10.8934%
250-499$10.8534%
500$10.8434%
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$16.42
$16.42
or
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameH2PAK-7

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More

Key features
  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Source sensing pin for increased efficiency