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SCT040W65G3-4
Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack1 (*) |
| Grade | Industrial |
| Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $10.63 | 0% |
| 10-99 | $9.33 | 12% |
| 100-500 | $8.51 | 20% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack1 (*) |
| Grade | Industrial |
| Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More
|