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SCT045W17KAG

Automotive-grade silicon carbide Power MOSFET 1700 V, 55 mOhm typ., 48 A in an HiP247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Key features
  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Very high operating junction temperature capability (TJ = 200 °C)
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ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More

Key features
  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Very high operating junction temperature capability (TJ = 200 °C)