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SCT070H120G3-7
Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | H2PAK-7 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $10.59 | 0% |
| 10-24 | $9.33 | 12% |
| 25-49 | $9.09 | 14% |
| 50-99 | $8.58 | 19% |
| 100-249 | $8.08 | 24% |
| 250-499 | $7.82 | 26% |
| 500 | $7.31 | 31% |
| 500 + | Contact sales | |
$10.59
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | H2PAK-7 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More
|