JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.
Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.
Enter your email address to be notified when the product is available to order.
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
