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    SCT10N120

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    Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    Learn More about SCT10N120

    Quantity $ per Unit Savings
    1 - 9$9.750%
    10 - 24$8.8110%
    25 - 99$8.4014%
    100 - 499$7.2925%
    500$6.3535%
    500 + Contact Sales
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    In stock
    $9.75
    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameHIP247
    Key features
    • Very tight variation of on-resistance vs. temperature
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance
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