🎉 Sitewide offer:
FREE shipping of
all products.
No code or minimum required.
🛒
Order now!
NRND
SCT10N120
Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an HiP247 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|
Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $8.65 | 1% |
| 10-24 | $8.56 | 0% |
| 25-99 | $4.84 | 43% |
| 100-249 | $4.33 | 49% |
| 250-500 | $3.92 | 54% |
| 500 + | Contact sales | |
$8.53
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|