Currency
USD
  • Language
    English
    • Toggle Nav
    Cart 0
    Search
    Advanced Search
    Menu
    Account
    Settings
  • Language
    English
    • Currency
    USD
    main product photo
    Loading...

    SCT10N120 Active

    Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    Learn More about SCT10N120
    Quantity $ per Unit Savings
    1 - 9$8.280%
    10 - 24$7.4910%
    25 - 99$7.1314%
    100 - 499$5.9229%
    500$5.2237%
    500 + Contact Sales
    Save to My List Compare
    Out of stock
    $8.28
    Notify me
    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameHIP247
    Key features
    • Very tight variation of on-resistance vs. temperature
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance
    My List
    Last Added Items
    1. Add to Cart
      Remove This Item
    Go to Wish List
    You have no items in your My List.