SCT10N120 Active
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Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| ROHS Compliance Grade | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 |
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This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
In stock:
$8.28
| Range | Unit Price | Savings |
|---|---|---|
| 1 - 9 | $8.28 | 0% |
| 10 - 24 | $7.49 | 10% |
| 25 - 99 | $7.13 | 14% |
| 100 - 499 | $5.92 | 29% |
| 500 | $5.22 | 37% |
| 500 + | Contact Sales | |