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Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $7.62 | 21% |
10-24 | $7.61 | 21% |
25-99 | $4.61 | 27% |
100-160 | $4.21 | 33% |
160 + |
Contact sales |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|