SCT10N120

Active

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

Quantity $ per Unit Savings
1 - 9$9.750%
10 - 24$8.8110%
25 - 99$8.4014%
100 - 499$7.2925%
500$6.3535%
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In stock
$9.75
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance