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SCT10N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an HiP247 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $9.00 | 0% |
| 10-99 | $4.93 | 45% |
| 100-500 | $4.05 | 55% |
| 500 + | Contact sales | |
$9.00
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|