SCT10N120AG

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Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

Quantity $ per Unit Savings
1 - 9$11.290%
10 - 24$10.2010%
25 - 99$9.7314%
100 - 499$8.4525%
500$7.3635%
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In stock
$11.29
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameHIP247
Key features
  • AEC-Q101 qualified
  • Very tight variation of on-resistance vs. temperature
  • Very high operating temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance