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SCT20N120H

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameH2PAK-2

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance
Out of Stock
Quantity $ per unit Savings
1-9$15.350%
10$14.108%
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$15.35
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameH2PAK-2

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More

Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance