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    SCT20N120H

    Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an H2PAK-2 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
    Read More

    Key features
    Key features
    • Very tight variation of on-resistance vs. temperature
    • Very high operating junction temperature capability (TJ = 175 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance
    In stock
    Quantity $ per unit Savings
    1-9$14.970%
    10$13.5010%
    10 + Contact sales
    $14.97
    $14.97
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
    Read More

    Key features
    Key features
    • Very tight variation of on-resistance vs. temperature
    • Very high operating junction temperature capability (TJ = 175 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance