SCT20N120H

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an H2PAK-2 package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	H2PAK-2

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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Key features

Key features
Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T_J = 175 °C) Very fast and robust intrinsic body diode Low capacitance

Out of Stock

Quantity	$ per unit	Savings
1-9	$15.35	0%
10	$14.10	8%
10 +	Contact sales

$15.35

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	H2PAK-2

Description

Key features

Key features
Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (T_J = 175 °C) Very fast and robust intrinsic body diode Low capacitance