NRND
SCT20N120H
Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an H2PAK-2 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | H2PAK-2 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $10.11 | 0% |
| 10-499 | $9.26 | 8% |
| 500 | $8.25 | 18% |
| 500 + | Contact sales | |
$10.11
$10.11
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | H2PAK-2 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|