SCT20N170

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Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package
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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • High speed switching performance
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Very high operating junction temperature capability (TJ = 200 °C)