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SCT30N120H

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameH2PAK-2

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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Key features
  • Very tight variation of on-resistance vs temperature
  • Very high operating temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance
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$22.88
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameH2PAK-2

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More

Key features
  • Very tight variation of on-resistance vs temperature
  • Very high operating temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance