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SCT30N120H

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Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package

Quantity $ per Unit Savings
1 - 9$24.020%
10 - 24$22.168%
25 - 99$21.1612%
100 - 499$18.9121%
500$18.7922%
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In stock
$24.02
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameH2PAK-2

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Key features
  • Very tight variation of on-resistance vs temperature
  • Very high operating temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance