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    SCT50N120

    Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameHIP247
    Description

    This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
    Read More

    Key features
    Key features
    • Very tight variation of on-resistance vs. temperature
    • Very high operating junction temperature capability (TJ = 200
      °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance
    In stock
    Quantity $ per unit Savings
    1-4$25.390%
    4 + Contact sales
    $25.39
    $25.39
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameHIP247
    Description

    This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
    Read More

    Key features
    Key features
    • Very tight variation of on-resistance vs. temperature
    • Very high operating junction temperature capability (TJ = 200
      °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance