SCT50N120 Active

Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
Quantity $ per Unit Savings
1 - 9$28.520%
10 - 24$26.298%
25 - 99$25.1312%
100 - 249$22.1722%
250 - 499$22.1322%
500$18.9134%
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In stock:
$28.52
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 200
    °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance