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NRND
SCT50N120
Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $27.36 | 2% |
| 10-99 | $22.52 | 16% |
| 100-500 | $19.90 | 26% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|