SCT50N120

Active

Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package

Quantity $ per Unit Savings
1 - 9$31.880%
10 - 24$29.408%
25 - 99$28.0812%
100 - 499$25.1121%
500$24.9322%
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In stock
$31.88
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 200
    °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance