Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.

SCTH40N120G2V-7

Active

Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package

Quantity $ per Unit Savings
1 - 9$20.820%
10$19.148%
Contact Sales
Out of stock
$20.82
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameH2PAK-7

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features
  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Source Kelvin pin for increased efficiency