Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today. Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today. Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today. Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today. Flat $5.99 shipping rate worldwide throughout May - no code needed! Start your design today.

SCTH50N120-7

NRND

Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ., TJ = 150 C) in an H2PAK-7 package

Quantity $ per Unit Savings
1$36.880%
Contact Sales
In stock
$36.88
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameH2PAK-7

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Key features
  • Very tight variation of on-resistance vs. temperature
  • Very fast and robust intrinsic body diode
  • Low capacitance
  • Kelvin pin