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SCTH70N120G2V-7

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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package

Quantity $ per Unit Savings
1 - 9$46.220%
10 - 24$43.137%
25 - 99$41.3311%
100 - 500$37.5719%
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In stock
$46.22
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1
GradeIndustrial
Package NameH2PAK-7

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Source sensing pin for increased efficiency