SCTH70N120G2V-7 Active

Silicon carbide Power MOSFET 1200 V, 90 A, 21 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1
GradeIndustrial
Package NameH2PAK-7
Key features
  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances