Shipping Delay:
Due to the backlog of orders caused by severe weather, order processing and shipping may be delayed. Thank you for understanding!
NRND
SCTH90N65G2V-7
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | H2PAK-7 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More
|
In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $29.60 | 0% |
| 10-24 | $26.76 | 10% |
| 25-49 | $26.37 | 11% |
| 50-99 | $22.11 | 25% |
| 100-249 | $21.20 | 28% |
| 250-499 | $20.69 | 30% |
| 500 | $20.38 | 31% |
| 500 + | Contact sales | |
$29.60
$29.60
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | H2PAK-7 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More
|