SCTH90N65G2V-7 Active
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Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
Quantity $ per Unit Savings
1 - 9$23.820%
10 - 24$21.988%
25 - 99$20.9912%
100 - 249$18.5222%
250 - 499$17.2927%
500$15.8134%
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In stock:
$23.82
or
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameH2PAK-7
Key features
  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances