SCTH90N65G2V-7

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Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
Quantity $ per Unit Savings
1 - 9$26.220%
10 - 24$22.8613%
25 - 99$21.6517%
100 - 500$21.6118%
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In stock:
$26.22
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameH2PAK-7
Key features
  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances