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SCTHC250N120G3AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | STPAK HC |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Out of Stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $73.91 | 0% |
| 10-99 | $61.49 | 17% |
| 100-500 | $54.98 | 26% |
| 500 + | Contact sales | |
$73.91
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | STPAK HC |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More
|